825nm 10W Infrared High Power Semiconductor Laser System For Scientific Research

825nm 10W Infrared High Power Semiconductor Laser System For Scientific Research

[Specifications]
Product Name: 825nm Semiconductor laser
Output Wavelength: 825nm ± 10nm 
Output Power: 10W
Spatial Mode: Multi-mode
Operating Mode: CW or Modulation
The Oolarization: 10:1
Directional Stability: <0.05 mrad
Bean Size: Near 6mm
Beam Divergence Angle:  2.5 mrad
Power Stability:  <3% per 2 hrs
Beam Height:  Near 39mm
Temperature Stabilizing: TEC
Warm Up Time: <5 minutes
Beam Quality (M²): <20
The best working temperature:20~30℃
Storage Temperature: 10~50℃
MTTF(mean time to failure): 10,000 hrs
Laser Head dimension: Near 211(L)x151(W)x50.5(H) mm³ (Click here find detail)
Power Supply: Split type power supply / Lab Adjustable power supply (Choose)
Power Supply-1: Split Power Supply (Choose) (Click here find detail)
Power Supply-2: Lab Adjustable Power Supply (Choose) (Click here find detail)
Laser Radiator/Heat Sink: Not Include / Include (Choose) (Click here find detail)
Modulation: 0~30KHz Analog or TTL
Warranty: 1 Year 

[Package Include]
1 x 825nm Laser head
1 x Power supply