808nm 500mW IR Semiconductor Laser Infrared Diode Laser Source

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808nm 500mW IR Semiconductor Laser Infrared Diode Laser Source
 
[Specifications]
Product Name: 808nm Semiconductor Laser
Lead Time: 1~3 weeks, Custom product available!
Output Wavelength: 808(+/-5) nm
Output Power: 500mW
Spatial Mode: Multimode
Operating Mode: CW or Modulation
Beam Asymmetry: ≤1:1.5
Beam Size: Near 5*5mm
Beam Divergence Angle:  Near 3 mrad
Power stability: <±3% per 4 hrs
Bean Height: Near 25mm
Temperature Stabilizing: TEC
Warm Up Time: <5 minutes
Beam Quality(M²): <2
Optimum Operating Temperature: 20~30℃
Storage Temperature: 10~50℃
MTTF(mean time to failure): 10,000 hrs
Laser Head dimension: Near 100(L)x40(W)x50(H) mm³ (Click here find detail)
Power Supply: Split type power supply / Lab Adjustable power supply (Choose)
Power Supply-1: Split Power Supply (Choose) (Click here find detail)
Power Supply-2: Lab Adjustable Power Supply (Choose) (Click here find detail)
Modulation: 0~30KHz Analog or TTL
Warranty: 1 Year
 
[Package include]
1 x 808nm Laser head
1 x Laser power supply

 

 

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IR semiconductor laser

IR semiconductor laser

IR semiconductor laser

civillaser power supply






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