860nm 2000mW IR Semiconductor Laser with Power Supply TTL Modulation

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860nm 2000mW IR Semiconductor Laser with Power Supply TTL Modulation
 
[Specifications]
Product Name: 860nm 2000mw IR Semiconductor Laser
Lead Time: 1~3 weeks! Custom product available!
Output Wavelength: 860(+/-5) nm
Output Power: 2000mW
Spatial Mode: Multi-mode
Operating mode: CW or Modulation
Prejudiced way: 10:1
Pointing Stability: <0.05 mrad
Beam diameter: 6mm
Beam Divergence Angle:  2.5 mrad
Power stability: <±3% per 2 hrs
Bean Height: 25mm
Temperature Stabilizing: TEC
Warm Up Time: <5 minutes
Beam quality(M2): <2
Optimum Operating Temperature: 20~30℃
Storage Temperature: 10~50℃
MTTF(mean time to failure): 10,000 hrs
Laser dimensions: 100(L)x40(W)x50(H)mm3
Modulation:  0~30khz Analog or TTL
 
[Package include]
1 x 860nm/2000mW IR  Laser head
1 x Laser power supply
 
 


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