1310nm 1200mW IR Semiconductor Laser System for Scientific Research

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1310nm 1200mW IR Semiconductor Laser System for Scientific Research

[Specifications]
Product Name: 1310nm Semiconductor Laser
Lead Time: 1~3 weeks
Output Wavelength: 1310nm±20nm
Output Power: 1200mW
Spatial Mode: Multi-mode
Operation Mode: CW or Modulation
Polarization: 10:01
Pointing Stability: <0.05 mrad
Beam Diameter (1/e²): Near 6mm
Beam Divergence (Full Angle): Near 2.5 mrad
Beam Height: Near 25mm
Beam Quality (M²): <2
Power Stability: <±3% per 2 hrs
Temperature Stabilizing: TEC
Warm Up Time: <5 minutes
Operating Temperature: 20~30℃
Storage Temperature: 10~50℃
Laser Head Dimension: Near 100(L)x40(W)x50(H)mm³(Click here find detail)
Power Supply: Split power supply / Lab Adjustable power supply (Choose)
Power Supply-1: Split Power Supply (Choose) (Click here find detail)
Power Supply-2: Lab Adjustable Power Supply (Choose) (Click here find detail)
Modulation: Analog/TTL modulation 0~30Khz
MTTF(mean time to failure): 10,000 hrs
Warranty: 1Year

[Packing List]
1 x 1310nm Laser head
1 x Power supply
 

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