Small Spot Semiconductor Laser 660nm 2000mW Red Diode Laser

Small Spot Semiconductor Laser 660nm 2000mW Red Diode Laser

[Specifications]
Product Name: 660nm Semiconductor Laser
Lead Time: 1~3 weeks
Output Wavelength: 660nm±5nm
Output Power: 2000mW
Spatial Mode: Multi-mode
Operation Mode: CW or Modulation
Pointing Stability: <0.05 mrad
Beam Size: Near 2*6mm
Beam Divergence (Full Angle): <1.5*4 mrad
Beam Height: Near 29mm
Power Stability: <3% per 4 hrs
Temperature Stabilizing: TEC
Warm Up Time: <1 minute
Beam Quality (M²): <2
Laser Head Dimension: Near 98(L)x56(W)x47(H)mm³(Click here find detail)
Power Supply: Split power supply / Lab Adjustable power supply (Choose)
Power Supply-1: Split Power Supply (Choose) (Click here find detail)
Power Supply-2: Lab Adjustable Power Supply (Choose) (Click here find detail)
Modulation: Analog/TTL modulation 0~30Khz
MTTF(mean time to failure): 10,000 hrs
Warranty: 1Year

[Packing List]
1 x 660nm Laser head
1 x Power supply