875nm 2000mW High Power Semiconductor Laser IR Laser

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875nm 2000mW High Power Semiconductor Laser IR Laser

[Specifications]
Product Name: 875nm Semiconductor Laser
Wavelength: 875nm±5nm
Output Power: 2000mW
Spatial Mode: Multimode
Operating Mode: CW or Modulation
Polarization: 10:01
Directional Stability: <0.05 mrad
Bean Size: Near 6mm
Beam Divergence Full Angle: 2.5 mrad
Power Stability: <3% per 2 hrs
Beam Height: Near 25mm
Temperature Stabilizing: TEC
Warm Up Time: <5 minutes
Beam Quality (M2): <20
The best working temperature:20~30℃
Storage Temperature: 10~50℃
MTTF(mean time to failure): 10,000 hrs
Laser Head Dimension: Near 100(L)x40(W)x50(H)mm3 (fan adds height) (Click here find detail)
Power Supply: Standard type power supply / Lab Adjustable power supply (Choose)
Power Supply-1: Standard Power Supply (Choose) (Click here find detail)
Power Supply-2: Lab Adjustable Power Supply (Choose) (Click here find detail)
Modulation: 0~30khz Analog or TTL
Warranty: 1 Year

Note:
This laser can be customized with fiber coupled laser. Please contact us if needed.
 

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