830nm 2000mW High Power Semiconductor Laser Infrared Diode Laser Source

830nm 2000mW High Power Semiconductor Laser Infrared Diode Laser Source

[Specifications]
Product Name: 830nm IR Semiconductor laser
Output Wavelength: 830nm± 10 nm
Output Power: 2W
Spatial Mode: Multimode
Operating Mode: CW or Modulation
Polarization: 10:01
Directional Stability: <0.05 mrad
Bean Size: Near 6mm
Beam Divergence Full Angle:  2.5 mrad
Power Stability:  <3% per 2 hrs
Beam Height: Near 25mm
Temperature Stabilizing: TEC
Warm Up Time: <5 minutes
Beam Quality (M2): <20
The best working temperature:20~30℃
Storage Temperature: 10~50℃
MTTF(mean time to failure): 10,000 hrs
Laser Head dimension: Near 100(L)x40(W)x50(H) mm3 (Click here find detail)
Power Supply: Standard type power supply / Lab Adjustable power supply (Choose)
Power Supply-1: Standard Power Supply (Choose) (Click here find detail)
Power Supply-2: Lab Adjustable Power Supply (Choose) (Click here find detail)
Modulation: 0~30KHz Analog or TTL
Warranty: 1 Year

[Packing List]
1 x 830nm laser
1 x Power supply

Note:
This laser can be customized with fiber coupled laser. Please contact us if needed.