808B-150-3-1-TO9 808nm 3W IR Laser Diode 150μm Emitter Width 1mm Cavity Length TO9 Package
[Features]
Peak wavelength: 808nm
Output power: 3W
[Applications]
Medical & Cosmetics
Laser sensor
Scientific research test
Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In Chin
[Specifications]
|
Parameters
|
Symbol
|
Min.
|
Typical
|
Max.
|
Unit
|
|
Peak wavelength
|
λ
|
|
808
|
|
nm
|
|
Spectral Bandwidth
|
BW
|
|
3
|
|
nm
|
|
Wavelenth Temperature Coefficient
|
Δλ/ΔT
|
|
0.25
|
|
nm/℃
|
|
Electro Optical Data
|
|
Operation Power
|
Pop
|
|
3
|
|
W
|
|
Operating current
|
Iop
|
2.3
|
2.6
|
2.9
|
A
|
|
Threshold current
|
Ith
|
|
0.5
|
|
A
|
|
Operating voltage
|
Vop
|
|
2.3
|
|
V
|
|
Slope efficiency
|
ηd=Po/(Iop -Ith)
|
|
1.4
|
|
W/A
|
|
Total conversion efficiency
|
η=Po/(Iop x Vop)
|
|
50
|
|
%
|
|
Beam Divergence Angle Width (Horizontal) ①
|
θ∥
|
|
8
|
12
|
degrees
|
|
Beam Divergence Angle Width (Vertical) ②
|
θ⊥
|
|
30
|
40
|
degrees
|
|
Geometrical
|
|
Emitter widthe
|
w
|
|
150
|
|
μm
|
|
Cavity length
|
L
|
|
1000
|
|
μm
|
|
Chip width
|
W
|
|
500
|
|
μm
|
|
Chip height
|
H
|
|
150
|
|
μm
|
|
Notes:
① The lifetime is not guaranteed if the laser is operated over the maximum rating.
② Full width at 95% power content.
③ FWHM (Full width half maximum).
|
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