1047nm 5.5W IR Single Emitter Laser Diode Chip Emitter Width 190μm 1470A-190-5.5-2-COS

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1047nm 5.5W IR Single Emitter Laser Diode Chip Emitter Width 190μm 1470A-190-5.5-2-COS

[Features]
High Power 
High Efficiency 
High reliablility 
Excellent beam characteristics

[Applications]
Industrial Pumping 
Medical & Cosmetics
Scientific research

Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In China

Absolute Maximum Ratings(Trt=25℃)

Parameters

Symbol

Value

Unit

Operating Temperature

Top

-20~50

Storage Temperature

Tstg

-40~80

 

Characteristics (Trt=25 ℃)

Parameters

Symbol

Min.

Typ.

Max.

Unit

Peak Emission Wavelength

λop

1450

1470

1490

nm

Spectral Bandwidth

BW

-

10

13

nm

Electro Optical Data

Operation Power

Pop

-

5.5

-

W

Operation Current

Iop

-

15

16.5

A

Turn-on Voltage

Von

-

0.9

1

V

Threhold Current

Ith

-

1

1.2

A

Operation Voltage

Vop

-

1.6

1.8

V

Wall plug efficiency

WPE

19

23

-

%

Slope Efficiency

SE

0.4

0.45

-

W/A

Beam Divergence Angle Width (Horizontal)①

θ∥

-

13

16

degrees

Beam Divergence Angle Width (Vertical))①

θ⊥

-

30

35

degrees

Geometrical

Emitting Dimension

w

-

190

-

μm²

Cavity Length

L

-

2000

-

μm

Chip Width

W

-

400

-

μm

Chip Height

H

-

150

-

μm

 

Notes: ①FWHM(Full width half maximum).

 

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