940nm 1~3000mW Adjustable IR Semiconductor Laser Source Invisible Laser Beam

$934.00

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940nm 1~3000mW Adjustable IR Semiconductor Laser Source Invisible Laser Beam

[Features]
TEC temperature control

[Applications]
Fluorescence spectroscopy, photodetection, cell analysis, etc.

Note:
Lead Time: About 2~4 weeks.

[Specification]

Parameter*1 Working Conditions Symbol Min. Value Typical Value Max. Value Unit
Optical Parameters
Output Power(CW) @PO PO   3000   mW
Power Stability (RMS) 2hrs Ps     3 %
Central Wavelength @PO λc 935 940 945 nm
Spectral Linewidth (FWHM) @PO Δλ   1 2 nm
Spot Size @PO D;   5*5   nm
Spot Divergence Angle @PO Div   6   mrad
Preheat Time @PO Tw     5 min
Noise RMS(10Hz-100MHz) N     1 %
Electrical Parameter Index
Operating Voltage @PO Vin 90 220 245 V
TTL Modulating Frequency*²       10   KHz
Electrical Parameter Index
Service Life*³ @PO/room temperature MTTF 10,000     Hrs
Operating Temperature   Tstg 0   40
Storage Temperature   Topr -20   65
Note *1: Test data at 25°C operating temperature;
*²: The standard configuration is TTL modulation, which can be replaced by analog modulation (0-1KHz);
*³: The service life refers to the service life of the laser diode.

 

semiconductor laser

semiconductor laser

semiconductor laser

semiconductor laser

semiconductor laser






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