1470nm 3W SE CW Laser Chip COS Laser Diode Emitter Width 96μm 1470A-96-3-2-COS Made in China

$73.00

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1470nm 3W SE(Single Emitter) CW Laser Chip COS(Chip on Submount) Laser Diode Emitter Width 96μm 1470A-96-3-2-COS Made in China

[Features]
High laser power.
High efficiency.
Long lifetime, high reliability.
Excellent beam characteristics.

[Applications]
Medical & Cosmetics
BHP treatment
EVLT
Scientific Research

Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In China

[Specifications]

Parameters

Symbol

Min.

Typ.①

Max.

Unit

Operation

Center wavelength

λ

1450

1470

1490

nm

Output power

Po

 

3.5

 

W

Operation mode

 

 

CW

 

 

Geometrical

Emitter width

w

 

96

 

μm

Cavity length

L

 

2000

 

μm

Chip width

W

 

500

 

μm

Chip height

H

 

150

 

μm

Electro Optical Data

Threshold current

Ith

 

0.45

 

A

Operating current

Iop

 

9

 

A

Operating voltage

Vop

 

1.6

 

V

Slope efficiency

ηd=Po/(Iop - Ith)

 

0.45

 

W/A

Total conversion efficiency

η=Po/(Iop x Vop)

 

24

 

%

Slow axis divergence②

θ∥

 

13

 

degrees

Fast axis divergence③

θ⊥

 

32

 

degrees

Spectral width③

△λ

 

10

 

nm

Polarization

 

 

TE

 

 

①. According to the single-tube chip test data. When testing a single-tube chip, it is packaged in COS (Chip On Submount), and the COS test temperature is 25°C.
②. Full width at 95 % power content.
③. FWHM(Full width half maximum).

 

 
COS laser chip

COS laser chip

COS laser chip

COS laser chip

COS laser chip

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