905nm 75W Pulsed Laser Diode TO56 Laser Chip 905C-300-75-0.75-TO Made in China

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905nm 75W Pulsed Laser Diode TO56 Laser Chip 905C-300-75-0.75-TO Made in China

[Features]
3 stack PLD.
Laser wavelength: 905nm
Peak output power: ≥75W
Optical aperture size: 300μm x 10μm

[Applications]
LiDAR
Laser ranging
Safety monitoring
Scientific research test

Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In China

[Specifications]

Parameters

Symbol

Value

Unit

Absolute Maximum Ratings(Trt=25℃)

Pulsed forward current

If

26

A

Reverse voltage
Vr

2.5

V

Pulse duration

tw

100

ns

Duty ratio

DR

0.1

%

Operating temperature

Top

-40~85

Storage temperature

Tstg

-40~105

Characteristics (Trt=25 ℃)
Iop=22A, Pw=200ns, f=5kHz, DR=0.1%, Ta=25℃

Wavelength

Peak emission wavelength

λop

905

nm

Wavelength tolerance

Δλ

10

nm

Spectral bandwidth①

Δλop

7

nm

Wavelenth temperature coefficient

Δλ/ΔT

0.28

nm/℃

Electro Optical Data

Minimum peak power at If

Pop

75

W

Forward current

If

22

A

On Voltage

Von

4.2

V

Series Resistance
Rs

0.454

Ω

Threhold current
Rs

0.8

A

Forward voltage at If
Vf

14.2

V

Beam divergence angle(Horizontal) ②
θ∥

12

degree

Beam divergence angle(Vertical) ①

θ⊥
30
degree

Geometrical

Optical aperture size

w x h

300 x 10

μm²

Cavity length

L

750

μm

Chip width

W

400

μm

Chip height

H

150

μm

①. FWHM(Full width half maximum).
②. Full width at 95% power content.

 

 
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