808nm 5W SE(Single-emitter) CW LD Chip COS(Chip On Submount) 96μm Emitter Width 4MM Cavity Length 808B-96-5-4-COS
[Features]
High laser power.
High efficiency.
Long lifetime, high reliability.
Excellent beam characteristics.
[Applications]
Medical & Cosmetics
Materials Processing
Pumping of solid-state lasers
Scientific Research
Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In China
[Specifications]
|
Parameters
|
Symbol
|
Min.
|
Typ.①②
|
Max.
|
Unit
|
|
Operation
|
|
Center wavelength
|
λ
|
803
|
808
|
813
|
nm
|
|
Output power
|
Po
|
|
5
|
|
W
|
|
Operation mode
|
|
|
CW
|
|
|
|
Geometrical
|
|
Emitter width
|
w
|
|
96
|
|
μm
|
|
Cavity length
|
L
|
|
4000
|
|
μm
|
|
Chip width
|
W
|
|
500
|
|
μm
|
|
Chip height
|
H
|
145
|
150
|
155
|
μm
|
|
Electro Optical Data
|
|
Threshold current
|
Ith
|
|
0.75
|
0.9
|
A
|
|
Operating current
|
Iop
|
|
4.8
|
5
|
A
|
|
Operating voltage
|
Vop
|
|
1.7
|
1.8
|
V
|
|
Slope efficiency
|
ηd=Po/(Iop - Ith）
|
1.1
|
1.22
|
|
W/A
|
|
Total conversion efficiency
|
η=Po/(Iop x Vop)
|
56
|
61
|
|
%
|
|
Slow axis divergence③
|
θ∥
|
|
8
|
10
|
degrees
|
|
Fast axis divergence④
|
θ⊥
|
|
36
|
40
|
degrees
|
|
Spectral width④
|
△λ
|
|
1.5
|
2
|
nm
|
|
Polarization
|
|
|
TM
|
|
|
|
Degree of polarization
|
TE/(TM+TE)
|
85
|
92
|
|
%
|
|
①. Typical values of test data are obtained from the test system of CivilLaser.
②. According to the single chip test data. During the single tube chip test, COS (Chip On Submount) packaging is adopted, and the COS test temperature is 25 ℃.
③. Covers 95% of energy.
④. FWHM(Full width half maximum).
|
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