665nm 500mW TO56 CW Laser Diode Emitter Width 55μm 665A-55-0.5-1.2-TO-A1
[Features]
Peak wavelength: 665nm
Output Power: 0.5W
[Applications]
Laser Illumination
Medical & Cosmetics
Scientific Research
Note:
1. Lead time: Some chips are in stock, and it will take 2 to 3 weeks if there is no stock.
2. Wholesale price: >100 pcs order, please contact us, the price has a bigger discount.
3. Country of origin: Made In China
[Specifications]
|
Parameters
|
Symbol
|
Min.
|
Typ.
|
Max.
|
Unit
|
|
Peak wavelength
|
λp
|
655
|
665
|
675
|
nm
|
|
Spectral bandwidth
|
BW
|
|
1
|
|
nm
|
|
Wavelength temperature coefficient
|
△λ/△T
|
|
0.17
|
|
nm/℃
|
|
Absolute Maximum Ratings(Trt=25℃)①
|
|
Operation Current
|
Iop
|
|
0.7
|
|
A
|
|
Reverse Voltage
|
Vr
|
|
2
|
|
V
|
|
Operation Temperature
|
Top
|
-10
|
25
|
50
|
℃
|
|
Storage Temperature
|
Tstg
|
-40
|
|
100
|
℃
|
|
Geometrical
|
|
Emitter width
|
w
|
|
55
|
|
μm
|
|
Cavity length
|
L
|
|
1200
|
|
μm
|
|
Chip width
|
W
|
|
250
|
|
μm
|
|
Chip height
|
H
|
|
150
|
|
μm
|
|
Electro Optical Data
|
|
Operation power
|
Pop
|
|
500
|
|
mW
|
|
Threshold current
|
Ith
|
|
230
|
250
|
mA
|
|
Operating current
|
Iop
|
600
|
700
|
800
|
mA
|
|
Operating voltage
|
Vop
|
|
2.2
|
2.5
|
V
|
|
Slope efficiency
|
ηd=Po/(Iop - Ith）
|
|
1
|
|
mW/mA
|
|
Total conversion efficiency
|
η=Po/(Iop x Vop)
|
27
|
32
|
|
%
|
|
Beam divergence angle width (Horizontal)①
|
θ∥
|
|
7
|
12
|
degrees
|
|
Beam divergence angle width (Vertical)②
|
θ⊥
|
33
|
38
|
43
|
degrees
|
|
①. The lifetime is not guaranteed if the laser is operated over the maximum rating.
②. Full width at 95% power content.
③. FWHM (Full width half maximum).
|
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