0.2nm Narrow Linewidth 785nm 1000mW NIR Diode Laser for Raman

$3,126.00

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0.2nm Narrow Linewidth 785nm 1000mW NIR Diode Laser for Raman

[Lead Time]
785nm 1000mW Raman Laser: 3~4 weeks

[Features]
1. Spectral linewidth: <0.2nm
2. High power stability: <3%

[Application]
2. Raman spectroscopy
2. Sensing

[Specifications]
Product Name: 785nm Narrow Linewidth Laser
Wavelength: 785nm
Output Power: 1000mW
Spectral Linewidth:<0.2nm
Beam Size: Near 1*5 mm
Beam Divergence Angle: Near 10mrad
Operating Temperature: 0°C-40°C
Storage Temperature: -40°C-85°C
 

Parameter Work condition Symbol Min. Typical Value Max. Unit
Output Power APC mode PO     1000 mW
Beam Diameter Po , 1/e2 DiaV   5   mm
DiaH   1   mm
Power Stability 2hrs Ps     3 %
Spectral Linewidth FWHM PO     0.2 nm
Spectral Stability λs PO   0.01   nm/°C
Central Wavelength @PO λc 784 785 796 nm
Service Life @PO MTBF 10000     Hrs

 

 

narrow linewidth raman laser

narrow linewidth raman laser

narrow linewidth raman laser

narrow linewidth raman laser

narrow linewidth raman laser
 






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