400nm~1100nm 2.5mm Silicon PIN Photodiode Low Dark Current TO5 Package

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400nm~1100nm 2.5mm Silicon PIN Photodiode Low Dark Current TO5 Package

[Features]
High reliability, low dark current.
400-1100nm spectral range.
1064nm responsivity up to 0.44mA/mW.
Active diameter 2.5x2.5mm.
Hermetic TO5 Can or with receptacle.

[Applications]
Optical sensor and Optical power meter 
Industrial automatic control
IR/ Laser light Monitoring
Fluorescence detector 
Medical equipment
Spectrophotometry /CT scan

Absolute maximum ratings:

Parameter Symbol Value Unit
Operating temperature Top -40~+85
Storage temperature Tstg -40~+100
Forward current If 10 mA
Reverse voltage Vr 30 V
Soldering temperature(time) Ts(10s) 260


Electrical and optical characteristics:(T=25℃)

Parameter Symbol Unit Typical Value
Active diameter Φ mm 2.5*2.5
Spectral range λ nm 400-1100
Responsivity Re (VR=5V,λ=405nm ) mA/mW 0.07
Re (VR=5V,λ=650nm ) mA/mW 0.44
Re (VR=5V,λ=850nm ) mA/mW 0.59
Re (VR=5V,λ=1064nm ) mA/mW 0.25
Response time Tr (RL=50Ω,VR=5V) ns 5
Dark current Id(VR=0V) pA 0.5
Id(VR=5V) pA 200
Reverse Breakdown voltage VBR (IR=10uA) V 70
Junction capacitance Cj (f=1MHz, VR=0V) pF 90
Cj (f=1MHz, VR=5V) pF 20
Saturated Optical Power Ps(VR=5V) mW 20
Operating voltage VR V 0-15
Shunt resistance Rsh (VR=10mV) 20
package Hermetic TO5 Can or with receptacle.


Note:
(1) The default is TO-5 Can package, please contact us if you need other models.
(2) If the quantity you ordered is less than 10 or far more than 10, the sales price is different, Pleas contact us.
(3) Delivery time: We have a small amount of commonly used PD. When the quantity is large, it needs to be re-produced, generally 1 to 3 weeks, different models have different delivery cycles.

 

400-1100nm photodiode

400-1100nm photodiode

400-1100nm photodiode

400-1100nm photodiode
 

 







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