532nm 100mW~200mW 0.1nm Narrow Linewidth Raman Laser System

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532nm 100mW~200mW 0.1nm Narrow Linewidth Raman Laser System

[Lead Time]
532nm 100mW Raman Laser: 3~4 weeks
532nm 200mW Raman Laser: About 4 weeks

[Features]
1. Spectral linewidth <0.1nm
2. High power stability: <3%

[Application]
2. Raman Spectroscopy Analysis
2. Sensing

[Specifications]
Product Name: 532nm Narrow Linewidth Laser
Wavelength: 532nm±0.5nm
Output Power: 100mW / 200mW (Choose)
Spectral Linewidth:<0.1nm
Beam Size: Near 2 mm
Beam Divergence Angle: Near 0.5 mrad
Operating Temperature: 0°C-40°C
Storage Temperature: -20°C-65°C

Parameter Work condition Symbol Min. Typical Value Max. Unit
Output Power APC mode PO     100/200 mW
Spot Mode       TEM00    
Beam Diameter Po , 1/e²     2.0   mm
Beam Divergence Angle Po , 1/e²     0.5   mrad
Spot Roundness     90     %
Power Stability 2hrs Ps   3 5 %
Spectral Linewidth FWHM PO     0.1 nm
Spectral Stability λs PO     0.1 nm
Central Wavelength @PO λc 531.5 532 532.5 nm
Service Life @PO MTBF 5,000     Hrs

 

 

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